对数饱和非线性介质中的自洽多模高斯孤子解

通过解对数饱和非线性介质中光场满足的非线性薛定谔方程,得到一组厄米-高斯型的自洽多模解.在借鉴了R.G.Glauber的相干态理论的基础上,合理假设这组解在非线性介质中呈泊松分布,进而得到了在对数饱和非线性介质中存在高斯孤子的结论,并获得高斯孤子解、非线性系数与泊松参量三者之间的关系.该关系说明,若在介质中存在高斯孤子解,其非线性系数必须满足条件a≥1.当α=1,在介质中仅存在单模高斯孤子,其光斑尺寸必须满足的条件W=1/k n0/n2.在该条件下,以"束腰"注入介质中的高斯光束才可以在保持其光斑尺寸不变的情况下传输,否则光斑尺寸会存在一定的振荡.而振荡方式、振荡范围(表示光斑尺寸展宽或压缩及大小)与输入光束光斑尺寸及其一次导数有直接关系.     

3 mm波段回旋速调管放大器设计与粒子模拟

设计了一支3 mm 波段基波回旋速调管,该回旋速调管工作在低损耗的TE01模式,包含四个谐振腔。首先使用线性理论确定工作参数的大致范围, 然后采用HFSS软件设计单个谐振腔,通过调整谐振腔尺寸和腔壁介质层参数使谐振腔的谐振频率和Q值符合设计要求, 最后使用粒子模拟程序优化设计了回旋速调管的互作用电路,研究了谐振腔参差调谐方案, Q值对回旋速调管性能的影响, 互作用电路的稳定性以及电子注参数变化对注-波互作用性能的影响。PIC粒子模拟结果表明,在电子注电压65 kV, 电流6 A, α(V⊥/V∥)1.5, 工作磁场3.6 T时,回旋速调管的3 dB带宽约为600 MHz,在93.7 GHz获得139 kW 的峰值输出功率,效率为35.6%,增益为28.4 dB。模拟中没有考虑电子注速度零散的影响。     

Design,construction and characterization of the compact ultrafast terahertz free-electron laser undulator

A compact ultrafast terahertz (CUTE) free-electron laser (FEL) is being developed at the Raja Ramanna Centre for Advanced Technology (RRCAT), Indore. The undulator required for the CUTE-FEL has recently been developed. We have designed, built and characterized a variable gap, 5 cm period, 2.5 m long pure permanent magnet undulator in two identical segments. The tolerable error in the magnetic field was 1% in rms, and we have measured it to be 0.7%. The obtained rms phase shake is around 2°. To ensure that the trajectories do not have an exit error in position or angle, corrector coils have been designed. Shimming coils have been applied for both the undulator segments to reduce the amplitude of the betatron oscillations in the vertical trajectory. Details of novel corrector coils and soft iron shims are given and their performance is discussed.      

Effect of external magnetic field on critical current for the onset of virtual cathode oscillations in relativistic electron beams

In this Letter we research the space charge limiting current value at which the oscillating virtual cathode is formed in the relativistic electron beam as a function of the external magnetic field guiding the beam electrons. It is shown that the space charge limiting (critical) current decreases with growth of the external magnetic field, and that there is an optimal induction value of the magnetic field at which the critical current for the onset of virtual cathode oscillations in the electron beam is minimum. For the strong external magnetic field the space charge limiting current corresponds to the analytical relation derived under the assumption that the motion of the electron beam is one-dimensional [D.J. Sullivan, J.E. Walsh, E. Coutsias, in: V.L. Granatstein, I. Alexeff (Eds.), Virtual Cathode Oscillator (Vircator) Theory, in: High Power Microwave Sources, vol. 13, Artech House Microwave Library, 1987, Chapter 13]. Such behavior is explained by the characteristic features of the dynamics of electron space charge in the longitudinal and radial directions in the drift space at the different external magnetic fields.     

Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction

The aim of this paper is to check the effect of artefacts introduced by focused ion beam (FIB) milling on the strain measurement by convergent beam electron diffraction (CBED). We show that on optimized silicon FIB samples, the strain measurement can be performed with a sensitivity of about 2.5 × 10⁻⁴ which is very close to the theoretical one and we conclude that FIB preparation can be suitable for such measurements in microelectronic devices.

To achieve this, we first used CBED and electron energy loss spectroscopy (EELS) which provide a procedure permitting an exact knowledge of the sample geometry, i.e. the thickness of both amorphous and crystalline layers. This procedure was used in order to measure the FIB-amorphized sidewall layer. It was found that if the FIB preparation is optimized one can reduce this amorphous layer down to around 7 nm on each side. Secondly different preparation techniques (cleavage, Tripod™ and FIB) permit to check if the surface damaged layer introduced by FIB influences the strain state of the sample. Finally, it was found that the damaged layer does not introduce measurable strain in pure silicon but reduces appreciably the quality of the CBED patterns.     

强流脉冲电子束辐照下单晶铝中的堆垛层错四面体

利用强流脉冲电子束技术对单晶铝进行了辐照,并利用透射电镜对强流脉冲电子束诱发的空位簇缺陷进行分析.实验结果表明,强流脉冲电子束能够诱发位错圈、孔洞甚至堆垛层错四面体这种通常在高层错能金属中不能形成的空位簇缺陷,并且三种不同类型的空位簇缺陷的形核过程并不同时发生,三种空位簇缺陷存在着密切的关系.根据实验结果提出了堆垛层错四面体形成与生长机理. 关键词： 强流脉冲电子束 堆垛层错四面体 单晶铝 空位簇缺陷     

GaAs极化电子源激活的yo-yo过程研究

通过对GaAs晶体产生极化电子束流的实验过程研究,着重对yo-yo过程中不同的实验参数对产生极化束流以及束流稳定情况的影响进行了分析,为获得稳定而持久的极化电流提供了有力的实验支持,并讨论了极化电流强度的可控性. 关键词： GaAs晶体 极化电子束 yo-yo过程 激活     

高效强流径向分离腔振荡器研究

根据同轴虚阴极的结构特点,提出了一种紧凑型径向分离腔振荡器,该径向分离腔的特点是输入电子束的电流可以很大,从而可以得到较高的微波输出功率. 综合考虑影响微波输出的各种因素,在电子束为410kV,电流为35kA的条件下,模拟得到的平均功率大于50GW,频率为146GHz,电子束功率效率达到348%. 关键词： 径向分离腔 高功率微波 同轴虚阴极 电子束分布     

基于自适应遗传算法部分相干光整形位相板的优化设计

基于自适应遗传算法,对部分相干光整形的相位板做了优化设计.以高斯-谢尔模型(GSM)光束为例,推导出远场光强的解析表达式.最优化设计的位相板能将GSM光束变为平顶光束.数值计算例表明空间相干性对光束整形效果的影响.与已有工作相比较说明自适应遗传算法用于部分相干光整形的优点. 关键词： 自适应遗传算法 光束整形 部分相干光 位相板     

中国环流器二号A(HL-2A)超声分子束注入最新结果

HL-2A装置电子回旋共振加热时,氘脉冲超声分子束穿越分界面,等离子体各项重要参数,包括等离子体储能、极向比压、中平面线平均密度、中心密度和温度上升,中子产额急剧增加. 超声分子束注入有可能较常规脉冲送气在台基顶部提供较强的粒子源,被认为是可供ITER替换脉冲送气的加料方法之一. HL-2A装置氢超声分子束注入的平均速度约为1.7km,与溢流(分子流)注入真空的速度测量作了比较. 关键词： 超声分子束注入 托卡马克 飞行时间法 加料